Improved Resonance Characteristics by Thermal Annealing of W/SiO2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices
نویسندگان
چکیده
In this paper, we, for the first time, present the effects of the thermal annealing of the W/SiO 2 multi-layer Bragg reflectors on the resonance characteristics of the ZnO-based film bulk acoustic wave resonator (FBAR) devices. In order to improve the resonance characteristics of the FBAR devices, we employed a thermal annealing process after the Bragg reflectors were formed on a silicon substrate using a radio frequency (RF) magnetron sputtering technique. As a result, the resonance characteristics of the FBAR devices were observed to strongly depend on the annealing conditions applied to the Bragg reflectors. The FBAR devices with the Bragg reflectors annealed at 400 C/30 min showed excellent resonance characteristics as compared to those with the non-annealed (as-deposited) Bragg reflectors. The newly proposed simple thermal annealing process will be very useful to more effectively improve the resonance characteristics of the future FBAR devices with multi-layer Bragg reflectors.
منابع مشابه
Electromechanical Coupling Factor of Thickness - Shear Mode of the Piezoelectric Thin Films Deposited on Substrates
An experiment method for characterizing piezoelectric film, which is deposited on a substrate plate to form a thickness-shear wave High-overmode Bulk Acoustic Resonator (HBAR), will be presented in this paper. Based on the parallel and series resonant frequency spectra of the HBAR, the electromechanical coupling factor of the piezoelectric film operating in thickness-shear mode can be evaluated...
متن کاملZinc Oxide Piezoelectric Thin Films for Bulk Acoustic Wave Resonators
・ Abstract – Characteristics of Zinc oxide (ZnO) piezoelectric thin films have been investigated for thin film bulk acoustic wave (BAW) resonators with relationship to bottom electrodes. A Metal/ZnO/Metal/SiO2 membrane structure, which has secondary harmonics, was adopted for the BAW resonators. The ZnO thin films, showed clear c-axis orientation, were made by rf sputtering on bottom electrodes...
متن کاملSwitchable and tunable bulk acoustic wave resonators based on BaxSr1−xTiO3 thin films
The main focus of this thesis is the study of a novel microwave component, the tunable thin film bulk acoustic wave resonator (TFBAR), based on ferroelectric BaxSr1−xTiO3 thin films. Conventional fixed frequency TFBARs, widely used for filtering applications in wireless communication systems, are based on ordinary piezoelectrics. The tunable TFBAR on the other hand utilizes the dc field induced...
متن کاملSurface and Bulk Acoustic Waves in Multilayer Structures
The application of various layers on a piezoelectric substrate is a way of improving the parameters of propagating electroacoustic waves. For example, a metal film of certain thickness may provide the thermal stability of the wave for substrate cuts, corresponding to a high electromechanical coupling coefficient. The overlayer can vary the wave propagation velocity and, hence, the operating fre...
متن کاملDesign & Fabrication of FBAR Device and RF Inductor Based on Bragg Reflector for RFIC Applications
The rapid expansion of the wireless market has led to a huge growth of more advanced mobile communication systems. Especially, the miniaturized mobile phones have been developed that have multi-functions with higher operating frequencies. Complying with the recent trends, there has been a great demand particularly for ultra-miniaturization and monolithic integration of RF filters as one of core...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2004